Spontaneous emission and lasing characteristics of GaAs-based 1.3 μm quantum dot lasers

被引：0
|
作者：
Deppe, DG [1 ]
Huffaker, DL [1 ]
Shchekin, O [1 ]
Csutak, S [1 ]
Park, G [1 ]
机构：
[1] Univ Texas, Microelect Res Ctr, Austin, TX 78758 USA
来源：
ADVANCED LUMINESCENT MATERIALS AND QUANTUM CONFINEMENT | 1999年 / 99卷 / 22期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The recent advances in fabricating 1.3 mu m wavelength, GaAs-based quantum dot lasers are described. We discuss the epitaxial crystal growth, quantum dot efficiency, and lasing characteristics in edge-emitting devices. The low dot density and deep confinement potentials for the 1.3 mu m quantum dots result in low threshold current density and low threshold room temperature operation in the continuous wave mode even for p-up mounted lasers.
引用
收藏
页码：149 / 159
页数：11
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