Analysis and Comparison of XOR Cell Structures for Low Voltage Circuit Design

被引:0
|
作者
Nishizawa, Shinichi [1 ]
Ishihara, Tohru [1 ]
Onodera, Hidetoshi [1 ]
机构
[1] Kyoto Univ, Grad Sch Informat, Sakyo Ku, Kyoto 6068501, Japan
关键词
D O I
暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
The performance of standard cells has a strong impact on the performance of a circuit synthesized with the cells. Although a complementary CMOS logic is usually used in the standard cells, it is known that a pass transistor logic can improve the performance of a circuit with a smaller area in some cases. We evaluate different types of XOR cells in different voltage conditions. Results show that the dual pass transistor XOR has a better performance than the complementary CMOS XOR in 0.6V operation, while the complementary CMOS XOR has a better performance in 1.2 V operation. More specifically, the area and the power consumption of a benchmark circuit composed of the dual pass transistor XOR can be reduced by 24% and 35%, respectively, compared to those of the same circuit composed of the complementary CMOS XOR in 0.6V operation.
引用
收藏
页码:703 / 708
页数:6
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