How Much Topological Insulation Does One Need? How Much Can One Get?

被引:0
|
作者
Lakhtakia, Akhlesh [1 ]
Mackay, Tom G. [2 ,3 ]
Chiadini, Francesco [4 ]
Diovisalvi, Annunziata [5 ]
Fiumara, Vincenzo [5 ]
Scaglione, Antonio [6 ]
机构
[1] Penn State Univ, Dept Engn Sci & Mech, 227 Hammond Bldg, University Pk, PA 16802 USA
[2] Univ Edinburgh, Sch Math, Edinburgh EH9 3FD, Midlothian, Scotland
[3] Univ Edinburgh, Maxwell Inst Math Sci, Edinburgh EH9 3FD, Midlothian, Scotland
[4] Univ Salerno, Dept Ind Engn, I-84084 Fisciano, Italy
[5] Univ Basilicata, Sch Engn, I-85100 Potenza, Italy
[6] Univ Salerno, Dept Ind Engn, I-84084 Fisciano, Italy
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Topological insulators (TIs) have taken electromagnetic-engineering research by a storm this decade, and numerous theoretical papers have been published after modeling a TI as a nonreciprocal biisotropic material. As the TI phenomenon macroscopically is manifested only at boundaries, the assumed nonreciprocity in the bulk is fallacious. The TI phenomenon is better accommodated as a boundary condition indicating the presence of conducting states of a specific type. Theory shows that the TI effects in the free space surrounding a region occupied by a TI material do not depend on the specific model chosen. We have collectively examined frequency-domain scattering by planar surfaces, TI-coated gratings, and spheres in order to answer the first question in the title of this presentation. Our answer is: a lot. Based on a review of experimental data available on a variety of chalcogenide TIs, our answer to the second question in the title of this presentation is: much less.
引用
收藏
页码:729 / 732
页数:4
相关论文
共 50 条