Photo-induced current transient spectroscopy and photoluminescence studies of defects in AgGa0.6In0.4Se2

被引：4
|
作者：
Cui, Yunlong [1 ]
Bhattacharya, Pijush [1 ]
Burger, Arnold [1 ]
Johnstone, D. [2 ]
机构：
[1] Fisk Univ, Dept Life & Phys Sci, Nashville, TN 37208 USA
[2] SEMETROL, Chesterfield, VA 23838 USA
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2013年 / 46卷 / 30期
基金：
美国国家科学基金会;
关键词：
CRYSTAL-GROWTH; RADIATIVE RECOMBINATION; TEMPERATURE-DEPENDENCE; ELECTRICAL-PROPERTIES; ROOM-TEMPERATURE; DEEP LEVELS; AGGASE2; GAP; GENERATION; PHASE;
D O I：
10.1088/0022-3727/46/30/305103
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Defect levels in semi-insulating AgGa0.6In0.4Se2 crystals grown by the horizontal Bridgman technique and annealed in vacuum at 750 degrees C for 20 days have been characterized using photo-induced current transient spectroscopy (PICTS) and low-temperature photoluminescence (PL). PICTS measurements revealed four electron-related defects located at (0.027 +/- 0.008), (0.051 +/- 0.005), (0.31 +/- 0.01) and (0.98 +/- 0.01) eV and two hole-related defects at (0.040 +/- 0.012) and (0.73 +/- 0.02) eV. Free exciton (FE) and donor-acceptor pairs emissions were observed in low-temperature PL spectra. The defect levels measured from PICTS are consistent with those from PL. The compositional uniformity of the crystals was investigated by employing micro-PL mapping of FE at 77 K. The temperature coefficients of the band-gap energies were estimated and discussed.
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页数：7
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