Power cycling analysis method for high-voltage SiC diodes

被引：8

作者：

Banu, V. ^{[1
]}

Soler, V. ^{[2
]}

Montserrat, J. ^{[2
]}

Milian, J. ^{[2
]}

Godignon, P. ^{[2
]}

机构：

[1] D T Microelect AIE, Campus UAB, Barcelona 080193, Spain

[2] CSIC, IMB CNM, Campus UAB, Barcelona 080193, Spain

来源：

MICROELECTRONICS RELIABILITY | 2016年 / 64卷

关键词：

Power cycling; SiC; Silicon carbide; Diode; JBS diode; High voltage; High temperature;

D O I：

10.1016/j.microrel.2016.07.047

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work describes a novel analysis method for the power cycling test, developed for high-voltage and temperature silicon carbide diodes. The silicon carbide devices working at temperatures beyond 170 degrees C, the maximum temperature rating for silicon devices, need specific reliability tests adapted to high temperature operation of this new generation of power devices. The specificity of the further presented method consist in the use of 10 ms sinusoidal power current pulses that are able to evidence the temperature developed inside the diode during the power pulse, the temperature characteristic delay versus the applied current and the temperature calibration method. Moreover, this overall method is able to evidence the transformations occurred in the bonding contact and the dye attach. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：429 / 433

页数：5

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