A 7W 23-30GHz Power Amplifier in a 100-nm GaN on Si technology

被引：0
|
作者：
Zheng, Penghui [1 ,2 ]
Zhang, Shiyong [1 ,2 ]
Xu, Jianxing [1 ,2 ]
Wang, Rong [1 ,2 ]
Tong, Xiaodong [1 ,2 ]
机构：
[1] China Acad Engn Phys, Inst Elect Engn, Mianyang 621999, Sichuan, Peoples R China
[2] China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Chengdu 610200, Sichuan, Peoples R China
来源：
2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2018年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a Ka-band MMIC power amplifier using 100 nm gate-length GaN process is presented, It was designed to get high output power and high gain. The power amplifier provides 7W of output power with a minimum 32% PAE working at 23-30 Gflz. We employed 100nm GaN process on 100um thick Si substrate technology. The out power of this MMIC is comparable to that of PA MMIC in GaN process on SiC substrate.
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页码：253 / 255
页数：3
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