Design for Manufacturing With Emerging Nanolithography

被引:81
|
作者
Pan, David Z. [1 ]
Yu, Bei [1 ]
Gao, Jhih-Rong [1 ]
机构
[1] Univ Texas Austin, Dept Elect & Comp Engn, Austin, TX 78712 USA
基金
美国国家科学基金会;
关键词
Design for manufacturing; double patterning; e-beam lithography (EBL); EUV lithography (EUVL); multiple patterning; nanolithography; physical design; LAYOUT DECOMPOSITION; THROUGHPUT ENHANCEMENT; HOTSPOT DETECTION; E-BEAM; LITHOGRAPHY; OPC; OPTIMIZATION; PERFORMANCE; VERIFICATION; METHODOLOGY;
D O I
10.1109/TCAD.2013.2276751
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
In this paper, we survey key design for manufacturing issues for extreme scaling with emerging nanolithography technologies, including double/multiple patterning lithography, extreme ultraviolet lithography, and electron-beam lithography. These nanolithography and nanopatterning technologies have different manufacturing processes and their unique challenges to very large scale integration (VLSI) physical design, mask synthesis, and so on. It is essential to have close VLSI design and underlying process technology co-optimization to achieve high product quality (power/performance, etc.) and yield while making future scaling cost-effective and worthwhile. Recent results and examples will be discussed to show the enablement and effectiveness of such design and process integration, including lithography model/analysis, mask synthesis, and lithography friendly physical design.
引用
收藏
页码:1453 / 1472
页数:20
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