Structure properties of MgxZn1-xO films

被引：0

作者：

Zhang, XJ ^{[1
]}

Ma, HL ^{[1
]}

Wang, QP ^{[1
]}

Ma, J ^{[1
]}

机构：

[1] Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China

来源：

JOURNAL OF INORGANIC MATERIALS | 2006年 / 21卷 / 01期

关键词：

MgxZn1-xO; radio frequency magnetron sputtering; structure properties;

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

MgxZn1-xO films (x=0.23) were prepared on silicon substrates by radio frequency magnetron sputtering at 80 degrees C. The structure properties of MgxZn1-xO films were studied by using XRD, HRTEM, Raman spectra and AFM. The analyses of XRD and HRTEM indicate that the MgxZn1-xO films have hexagonal wurtzite single-phase structure and a preferred orientation with c axis perpendicular to the substrates. The lattice constants of MgxZn1-xO films are similar to those of ZnO films. Raman spectra of ZnO and MgxZn1-xO films reveal that the MgxZn1-xO films have not only hexagonal wurtzite structure, but also higher crystalline quality than ZnO films. AFM image indicates that the MgxZn1-xO films are polycrystalline.

引用

页码：235 / 238

页数：4

共 9 条

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