Analysis of light propagation for a crossing of thin silicon wires using vertical tunnelling coupling with a thick optical channel waveguide

被引:5
|
作者
Tsarev, A. V. [1 ]
Kolosovskii, E. A. [1 ]
机构
[1] Russian Acad Sci, Siberian Branch, AV Rzhanov Inst Semicond Phys, Novosibirsk 630090, Russia
基金
俄罗斯基础研究基金会;
关键词
integrated optics; optical waveguide; method of lines; finite-difference time-domain (FDTD) method; beam propagation method (BPM); nanophotonics; CROSSTALK;
D O I
10.1070/QE2013v043n08ABEH015089
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Using silicon photonic wires in a silicon-on-insulator structure as an example, we examine the problem of crossings of thin, high-index-contrast channel waveguides. To ensure high optical wave transmission efficiency at as low a level of parasitic scattering as possible, we propose using a structure with vertical coupling between a thin tapered silicon waveguide and a thick polymer waveguide, separated by a thin buffer oxide layer. Numerical simulation is used to find conditions under which such a structure (3x90 mu m in dimensions) ensures 98% and 99% transmission efficiency at similar to 1.55 mu m in 35- and 26-nm spectral ranges, respectively, for direct propagation and 99.99% transmission in the transverse direction. The optical element in question is proposed for use in optical microchips with multiple channel waveguide crossings.
引用
收藏
页码:744 / 750
页数:7
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