Ab initio calculations of the thermal properties of boron arsenide

被引:5
|
作者
Yaddanapudi, Krishna [1 ]
机构
[1] Univ Calif Davis, Dept Mat Sci & Engn, Davis, CA 95616 USA
关键词
BAs; Thermal properties; Ab initio calculations; GGA; LDA; QHA; EXPANSION COEFFICIENT; CONDUCTIVITY; PARAMETER; CRYSTAL; SILICON;
D O I
10.1016/j.commatsci.2020.109887
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thermal properties of bulk zinc-blende boron arsenide (BAs) were investigated by performing ab initio calculations using both the local density approximation (LDA) and generalized gradient approximation (GGA) for the exchange-correlation potential. Phonon dispersion relations were studied within the framework of density functional perturbation theory (DEPT) and the subsequent thermal properties were computed using the quasiharmonic approximation (QHA). We have computed the temperature dependence of lattice constant (a(o)), isothermal bulk modulus (B-o), linear thermal expansion coefficient (alpha(L)), average Gruneisen parameter (gamma), and specific heat capacity at constant pressure (C-p) as well as at constant volume (C-v) of BAs. The calculated LDA values at 300K of B-c (142.8 GPa), alpha(L) (4.01 x 10(-1) K-1), gamma (0.816), and C-p (0.34 J g(-1) K-1) are in excellent agreement with the reported experimental values of 148 GPa, 3.85 x 10(-6) K-1, 0.82, and 0.4 J g(-1) K-1 respectively in the same order. In contrast, the GGA is found to overestimate the values of thermal properties for all the temperatures when compared to LDA, except the isothermal bulk modulus. The discrepancy between the computed LDA and GGA values has been discussed in detail. Results further indicate that the discrepancy between the computed LDA and GGA values of a(o), B-o is found to increase with the increase in temperature. In contrast, the discrepancy in the values of C-p, C-v, gamma and alpha(L) is found to decrease with the increase in temperature. In the subsequent calculations, the mode-Griineisen parameter corresponding to various phonon modes has been computed. No negative thermal expansion (NTE) is observed, although, the mode-Griineisen parameter corresponding to transverse acoustic phonons exhibits a small negative value at the zone-edge of the Brillouin Zone. Finally, the intrinsic lattice thermal conductivity (kappa(l)) of BAs has been estimated using the Slack's model. Results indicate that the Slack's model underestimates the kappa(l) of BAs, which is possibly due to the low acoustic Debye temperature (theta(a)) obtained for BAs.
引用
收藏
页数:9
相关论文
共 50 条
  • [1] Ab initio study of the unusual thermal transport properties of boron arsenide and related materials
    Broido, D. A.
    Lindsay, L.
    Reinecke, T. L.
    PHYSICAL REVIEW B, 2013, 88 (21)
  • [2] Ab initio study of the effect of vacancies on the thermal conductivity of boron arsenide
    Protik, Nakib Haider
    Carrete, Jesus
    Katcho, Nebil A.
    Mingo, Natalio
    Broido, David
    PHYSICAL REVIEW B, 2016, 94 (04)
  • [3] Boron in ab initio calculations
    Boustani, I
    Quandt, A
    COMPUTATIONAL MATERIALS SCIENCE, 1998, 11 (02) : 132 - 137
  • [4] Probing properties of boron α-tubes by ab initio calculations
    Singh, Abhishek K.
    Sadrzadeh, Arta
    Yakobson, Boris I.
    NANO LETTERS, 2008, 8 (05) : 1314 - 1317
  • [5] Ab initio calculations on the structure and properties of hexagonal boron nitrides
    Napolion, Brian
    Williams, Quinton L.
    CHEMICAL PHYSICS LETTERS, 2010, 490 (4-6) : 210 - 215
  • [6] Ab Initio Calculations on the Magnetic Properties of Hydrogenated Boron Nitride Nanotubes
    Lii, Feng
    Zhu, Zhonghua
    Zhao, Mingwen
    Xia, Yueyuan
    JOURNAL OF PHYSICAL CHEMISTRY C, 2008, 112 (42): : 16231 - 16235
  • [7] An ab initio study of the electronic structure of boron arsenide, BAs
    Magoulas, Ilias
    Kalemos, Apostolos
    JOURNAL OF CHEMICAL PHYSICS, 2013, 139 (15):
  • [8] Ab initio calculations of indium arsenide in the wurtzite phase: structural, electronic and optical properties
    Dacal, Luis C. O.
    Cantarero, A.
    MATERIALS RESEARCH EXPRESS, 2014, 1 (01):
  • [9] Ab initio calculations of thermal radiative properties: The semiconductor GaAs
    Bao, Hua
    Ruan, Xiulin
    INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER, 2010, 53 (7-8) : 1308 - 1312
  • [10] Ab-initio calculations of electronic, transport, and structural properties of boron phosphide
    Ejembi, J. I.
    Nwigboji, I. H.
    Franklin, L.
    Malozovsky, Y.
    Zhao, G. L.
    Bagayoko, D.
    JOURNAL OF APPLIED PHYSICS, 2014, 116 (10)