Bulk electronic structure of the dilute magnetic semiconductor Ga1-xMnxAs through hard X-ray angle-resolved photoemission

被引：1

作者：

Gray, A. X. ^{[1
,2
,3
,4
]}

Minar, J. ^{[5
]}

Ueda, S. ^{[6
]}

Stone, P. R. ^{[2
,7
]}

Yamashita, Y. ^{[6
]}

Fujii, J. ^{[8
]}

Braun, J. ^{[5
]}

Plucinski, L. ^{[9
]}

Schneider, C. M. ^{[9
]}

Panaccione, G. ^{[8
]}

Ebert, H. ^{[5
]}

Dubon, O. D. ^{[2
,7
]}

Kobayashi, K. ^{[6
]}

Fadley, C. S. ^{[1
,2
]}

机构：

[1] Univ Calif Davis, Dept Phys, Davis, CA 95616 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA

[3] Stanford Univ, Stanford Inst Mat & Energy Sci, Menlo Pk, CA 94025 USA

[4] SLAC Natl Accelerator Lab, Menlo Pk, CA 94025 USA

[5] Univ Munich, Dept Chem, D-81377 Munich, Germany

[6] Natl Inst Mat Sci, NIMS Beamline Stn SPring 8, Mikazuki, Hyogo 6795148, Japan

[7] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[8] Ist Officina Mat IOM CNR, Lab TASC, I-34149 Trieste, Italy

[9] Res Ctr Julich, Peter Grunberg Inst PGI 6, D-52425 Julich, Germany

来源：

NATURE MATERIALS | 2012年 / 11卷 / 11期

关键词：

CURIE-TEMPERATURE; ION-IMPLANTATION; SPECTROSCOPY;

D O I：

10.1038/NMAT3450

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A detailed understanding of the origin of the magnetism in dilute magnetic semiconductors is crucial to their development for applications. Using hard X-ray angle-resolved photoemission (HARPES) at 3.2 keV, we investigate the bulk electronic structure of the prototypical dilute magnetic semiconductor Ga0.97Mn0.03As, and the reference undoped GaAs. The data are compared to theory based on the coherent potential approximation and fully relativistic one-step-model photoemission calculations including matrix-element effects. Distinct differences are found between angle-resolved, as well as angle-integrated, valence spectra of Ga0.97Mn0.03As and GaAs, and these are in good agreement with theory. Direct observation of Mn-induced states between the GaAs valence-band maximum and the Fermi level, centred about 400meV below this level, as well as changes throughout the full valence-level energy range, indicates that ferromagnetism in Ga1-xMnxAs must be considered to arise from both p-d exchange and double exchange, thus providing a more unifying picture of this controversial material.

引用

页码：957 / 962

页数：6

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