Spectroscopic analysis of stress-induced defects in thin silicon oxide films

被引：1
|
作者：
Komiya, K
Omura, Y
机构：
[1] Kansai Univ, High Tech Res Ctr, Suita, Osaka 5648680, Japan
[2] Kansai Univ, Fac Engn, Suita, Osaka 5648680, Japan
来源：
MICROELECTRONIC ENGINEERING | 2001年 / 59卷 / 1-4期
关键词：
stress-induced leakage current; SiO2; single-dominant defect level; discharge current;
D O I：
10.1016/S0167-9317(01)00647-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes a significant feature of stress-induced defects on the basis of the steady state SILC component and transient characteristics. Fourier transformation of the discharging current strongly suggests, in contrast to past results, that most defects share virtually the same energy level, Assuming that the defect level is 2.1 eV below the SiO2 conduction band bottom, simple Monte Carlo simulations show the defects lie 1.2 nm from the substrate. (C) 2001 Elsevier Science BY All rights reserved.
引用
收藏
页码：61 / 65
页数：5
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