Very High Brightness Diode Lasers

被引:1
|
作者
Heinemann, Stefan [1 ]
Lewis, Ben [1 ]
Michaelis, Karsten [1 ]
Schmidt, Torsten [1 ]
机构
[1] Fraunhofer USA, Ctr Laser Technol, Plymouth, MI 48170 USA
关键词
D O I
10.1117/12.908828
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Multiple Single Emitter (MSE) modules allow highest power and highest brightness diode lasers based on standard broad area diodes. 12 single emitters, each rated at 11 W, are stacked in fast axis and with polarization multiplexing 200W are achieved in a fully collimated beam with a beam quality of 7mm*mrad in both axes. Volume Bragg Gratings (VBG) stabilize the wavelength and narrow the linewidth to less than 2nm. Dichroic mirrors are used for dense wavelength multiplexing of 4 channels within 12 nm. 400W are measured from a 0.2 mm fiber, 0.1 NA. Control and drive electronics are integrated into the 200 W platform and represent a basic building block for a variety of applications, such as a flexible turn key system comprising 12 MSE modules. An integrated beam switch directs the light in six 100 mu m, or in one 0.2 mm and one 0.1 mm fiber. 800W are measured from the six 0.1 mm fibers and 700W from the 0.2 mm fiber. The technologies can be transferred to other wavelengths to include 793 nm and 1530 nm. Narrow line gratings and optimized spectral combining enable further improvements in spectral brightness and power.
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页数:6
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