Broadband Interconnect Design for Silicon-Based System-in-Package Applications up to 170 GHz

被引：0

作者：

Topak, Eray ^{[1
]}

Choi, Joo-Young ^{[2
]}

Merkle, Thomas ^{[1
]}

Koch, Stefan ^{[1
]}

Saito, Shin ^{[1
]}

Landesberger, Christof ^{[3
]}

Faul, Robert ^{[3
]}

Bock, Karlheinz ^{[3
]}

机构：

[1] Sony Deutschland GmbH, Sensing Syst Lab, Hedelfingerstr 61, D-70327 Stuttgart, Germany

[2] Avago Technol GmbH, D-81737 Munich, Germany

[3] Fraunhofer Inst Modular Solid State Technol EMFT, D-80686 Munich, Germany

来源：

2013 EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2013年

关键词：

Millimeter wave devices; packaging; millimeter-wave integrated circuits;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the design of vertical chip-to-chip interconnects for mm-wave system-in-package (SiP) applications up to 170 GHz. Solid and liquid type polymer materials are used as the interlayer dielectric on the structured Si-wafers to realize coplanar waveguide (CPW) interconnects. Coplanar transmission lines fabricated on high- and low-resistivity silicon substrates are tested and their characteristics are compared, as well. The interconnect structures show excellent electrical performance from DC up to 170 GHz with an insertion loss of 0.6 dB per transition at 170 GHz.

引用

页码：116 / 119

页数：4

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