Excess currents induced by hot-hole injection and F-N stress in thin SiO2 films

被引：0
|
作者：
Teramoto, A [1 ]
Kobayashi, K [1 ]
Matsui, Y [1 ]
Hirayama, M [1 ]
Yasuoka, A [1 ]
机构：
[1] MITSUBISHI ELECTR CORP,ULSI LAB,ITAMI,HYOGO 664,JAPAN
来源：
1996 IEEE INTERNATIONAL RELIABILITY PHYSICS PROCEEDINGS, 34TH ANNUAL | 1996年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：113 / 116
页数：4
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