Electron transmission in symmetric and asymmetric double-barrier structures controlled by laser fields

被引：10
|
作者：
Aktas, S. [1 ]
Bilekkaya, A. [2 ]
Boz, F. K. [1 ]
Okan, S. E. [1 ]
机构：
[1] Trakya Univ, Dept Phys, TR-22030 Edirne, Turkey
[2] Trakya Univ, Dept Elect, Edirne Vocat Coll Tech Sci, TR-22100 Edirne, Turkey
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2015年 / 85卷
关键词：
Transmission coefficient; Laser field; Double-barrier structure; RESONANCE CONDITIONS; DENSITY; STATES; WELLS;
D O I：
10.1016/j.spmi.2015.05.016
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The potential profiles of symmetric and asymmetric rectangular double-barrier structures made of (Ga, Al)As/GaAs and the transmission coefficient of an electron in these systems have been investigated under intense laser field. The results show that the field alters the potential profile, and the transmission coefficient can thus be controlled. The transmission at the first resonance energy for the symmetric structure is higher than that of the asymmetric structure. Therefore, the symmetric design is feasible. The properties exhibited in this work may establish guidance to device applications. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码：266 / 273
页数：8
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