Improvement in PTCR effect of BaTiO3-based semiconducting ceramics caused by CdO dopant

被引：0

作者：

Qi, JQ ^{[1
]}

Li, LT ^{[1
]}

Zhu, Q ^{[1
]}

Wang, YL ^{[1
]}

Gui, ZL ^{[1
]}

机构：

[1] Tsing Hua Univ, Dept Mat Sci & Engn, State Key Lab Advance Ceram & Fine Proc, Beijing 100084, Peoples R China

来源：

ACTA CHIMICA SINICA | 2001年 / 59卷 / 11期

关键词：

Cd; BaTiO3; PTCR;

D O I：

暂无

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The PTCR (positive temperature coefficient resistivity) effect of BaTiO3 based semiconducting ceramics is usually related to the donor or acceptor dopants. It would be influenced severely by vapor dopants during sintering. With high vapor pressure at high temperature, CdO could be employed as a suitable vapor dopant. The influence of CdO and CdO vapor on the PTCR effect of BaTiO3 based semiconducting ceramics was studied. It was found for the first fime that either solid CdO or CdO vapor dopant could enhance the PTCR effect of BaTiO3 based semiconducting ceramics. The enhancement caused by CdO vapor dopant was much more obvious than that caused by solid CdO dopant. This phenomenon could not be interpreted by the existing theory. From a view of defect chemistry, it was presumed that the enhancement effects were due to the transversion of the Cd2+ at grainboundary from Ba sites to Ti sites during ferroelectric phase transition.

引用

页码：1942 / 1945

页数：4

共 11 条

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