Effect of Si doping on optical and thermal properties of MOVPE GaN thin layers

被引：4
|
作者：
Saadallah, Faycel [1 ]
Benzarti, Zohra [2 ]
Halidou, Ibrahim [2 ]
Yacoubi, Noureddine [1 ]
El Jani, Belgacem [2 ]
机构：
[1] IPEIN Nabeul, Unite Photothermie & Composants Elect, Tunis, Tunisia
[2] Fac Sci Monastir, Unite Rech HeteroEpitaxies & Applicat URHEA, Tunis, Tunisia
来源：
OPTIK | 2013年 / 124卷 / 23期
关键词：
GaN; Si doping; Defects; Optical absorption; Thermal conductivity; Photothermal deflection; PHOTOTHERMAL DEFLECTION SPECTROSCOPY; FILMS; CONDUCTIVITY; ABSORPTION; GROWTH; RAMAN;
D O I：
10.1016/j.ijleo.2013.04.087
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Photothermal deflection spectroscopy is used to investigate thermal and optical properties of MOVPE grown GaN thin layers deposited on sapphire substrate. The effects of Si doping on absorption spectrum and gap energy are revealed. Also, doping-induced free carrier absorption is extracted from absorption in the sub-gap region. Moreover, the variations of photothermal signal versus modulation frequency are used to determine thermal properties of these films. The measured thermal conductivity is clearly decreased by Si doping, the main reason should be the phonon scattering on point defects. (C) 2013 Elsevier GmbH. All rights reserved.
引用
收藏
页码：6190 / 6193
页数：4
相关论文
共 50 条
  • [1] Mn DOPING OF GaN LAYERS GROWN BY MOVPE
    Simek, Petr
    Sofer, Zdenek
    Sedmidubsky, David
    Jankovsky, Ondrej
    Hejtmanek, Jiri
    Marysko, Miroslav
    Vaclavu, Michal
    Mikulics, Martin
    CERAMICS-SILIKATY, 2012, 56 (02) : 122 - 126
  • [2] The influence of Si on the properties of MOVPE grown GaN thin films: Optical and EPR study
    Buryi, M.
    Babin, V.
    Hubacek, T.
    Jary, V.
    Hajek, F.
    Kuldova, K.
    Artemenko, A.
    Hospodkova, A.
    RADIATION MEASUREMENTS, 2022, 157
  • [3] Effect of H, O intentionally doping on photoelectric properties in MOVPE-growth GaN layers
    Wang, Yaxin
    Ohkawa, Kazuhiro
    AOPC 2017: OPTOELECTRONICS AND MICRO/NANO-OPTICS, 2017, 10460
  • [4] Optical studies of MOVPE grown GaN layers
    Ciorga, M
    Jezierski, K
    Bryja, L
    Misiewicz, J
    Paszkiewicz, R
    Korbutowicz, R
    Panek, M
    Paszkiewicz, B
    Tlaczala, M
    Trabjerg, I
    EPILAYERS AND HETEROSTRUCTURES IN OPTOELECTRONICS AND SEMICONDUCTOR TECHNOLOGY, 1999, 3725 : 178 - 181
  • [5] Effect of light Si doping on the properties of GaN
    Shang, Lin
    Zhai, Guangmei
    Jia, Zhigang
    Mei, Fuhong
    Lu, Taiping
    Liu, Xuguang
    Xu, Bingshe
    PHYSICA B-CONDENSED MATTER, 2016, 485 : 1 - 5
  • [6] Influence of Si doping on optical properties of wurtzite GaN
    da Silva, AF
    Araújo, CM
    Sernelius, BE
    Persson, C
    Ahuja, R
    Johansson, B
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2001, 13 (40) : 8891 - 8899
  • [7] Effects of intentional oxygen and carbon doping in MOVPE-grown GaN layers on photoelectric properties
    Wang, Yaxin
    Teramoto, Takashi
    Ohkawa, Kazuhiro
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2015, 252 (05): : 1116 - 1120
  • [8] Effect of thermal annealing on the metastable optical properties of GaN thin films
    Chang, Y. C.
    Kolbas, R. M.
    Reitmeier, Z. J.
    Davis, R. F.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2006, 24 (04): : 1051 - 1054
  • [9] Doping of Si into GaN nanowires and optical properties of resulting composites
    Xu, C
    Chung, S
    Kim, M
    Kim, DE
    Chon, B
    Hong, S
    Joo, T
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2005, 5 (04) : 530 - 535
  • [10] Effect of the Disordering of Thin Surface Layers on the Electronic and Optical Properties of Si(111)
    B. E. Umirzakov
    D. A. Tashmukhamedova
    A. K. Tashatov
    N. M. Mustafoeva
    D. M. Muradkabilov
    Semiconductors, 2020, 54 : 1424 - 1429
12345