Fullerene-like nano-crystalline CNx films and its characteristics of field electron emission

被引:2
|
作者
Lan, Z [1 ]
Ma, HZ
Li, HJ
Yang, SE
Ning, Y
Hu, HL
Zhang, BL
机构
[1] Zhengzhou Univ, Dept Engn Mech, Zhengzhou 450002, Peoples R China
[2] Zhengzhou Univ, Dept Phys, Zhengzhou 450052, Peoples R China
[3] Chinese Acad Sci, Anhui Inst Opt & Fine Mech, Hefei 230031, Peoples R China
关键词
fullerene-like; CNx films; field electron emission; microwave plasma-enhanced chemical vapor phase deposition;
D O I
10.7498/aps.53.883
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
CNx films were prepared by using microwave plasma-enhanced chemical vapor phase deposition. As-deposited films were analyzed by x-ray photoelectron spectroscopy, x-ray diffraction, scanning electron microscopy and Raman spectroscopy. Field electron emission characteristics of thin films were studied. Experimental results indicate that the film structure and properties of the field electron emission are related to flow ratio of N-2 to H-2 while the flow rate of CH4 was kept at 8 seem. When the flow ratio of N-2 to H-2 was 50/50 seem, the obtained film had a nano-crystalline graphitic structure with curved basal planes (fullerene-like structure) and excellent properties of field electron emission. The turn-on field decreased to 1.1 V/mum. At an electric field of 5.9V/mum, the average current density was 70muA/cm(2) and emission sites density was larger than 1 x 10(4) cm(-2).
引用
收藏
页码:883 / 887
页数:5
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