Impact of Reduced Gate-to-Source Spacing on Indium Phosphide High Electron Mobility Transistor Performance

被引：5

作者：

Calvo Ruiz, Diego ^{[1
]}

Han, Daxin ^{[1
]}

Bonomo, Giorgio ^{[1
]}

Saranovac, Tamara ^{[1
]}

Ostinelli, Olivier ^{[1
]}

Bolognesi, Colombo R. ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, Millimeter Wave Elect Grp, Dept Informat Technol & Elect Engn, Gloriastr 35,ETZ Bldg, CH-8092 Zurich, Switzerland

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2021年 / 218卷 / 03期

基金：

瑞士国家科学基金会;

关键词：

direct current; gate-to-source spacing; indium phosphide high electron mobility transistors; noise characterization; radio frequency; LEAKAGE CURRENT; NOISE; AMPLIFICATION;

D O I：

10.1002/pssa.202000191

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium phosphide (InP)-based high electron mobility transistors (HEMTs) with an offset gate enable higher maximum oscillation frequency (f(MAX)) values because of the resulting reduction in gate-to-source resistance. Following this approach, improved direct current (DC) characteristics and cutoff frequencies (f(T)/f(MAX) > 410/710 GHz withL(G) = 50 nm) are shown with respect to centered gate devices. However, HEMTs with an offset gate show degraded noise performances compared with centered gate devices because of a higher gate leakage current. The results show that offsetting the gate closer to the source is not desirable for ultra-low-noise performance.

引用

页数：6

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