Low-dimensional transit-time diodes for terahertz generation

被引：2

作者：

Khabutdinov, R. ^{[1
,2
]}

Semenikhin, I. ^{[1
]}

Davydov, F. ^{[1
]}

Svintsov, D. ^{[1
,2
]}

Vyurkov, V. ^{[1
,2
]}

Fedichkin, L. ^{[1
,2
]}

Rudenko, K. ^{[1
,2
]}

Borzdov, A. V. ^{[3
]}

Borzdov, V. M. ^{[3
]}

机构：

[1] RAS, Inst Phys & Technol, Nakhimovsky Prosp 34, Moscow 117218, Russia

[2] State Univ, Moscow Inst Phys & Technol, Inst Str 9, Dolgoprudnyi 141701, Russia

[3] Belarusian State Univ, Nezavisimosti Prosp, Minsk 220030, BELARUS

来源：

INTERNATIONAL CONFERENCE ON MICRO- AND NANO-ELECTRONICS 2016 | 2016年 / 10224卷

基金：

俄罗斯基础研究基金会;

关键词：

terahertz generation and detection; transit-time diode; low-dimensional structures; barrier injection;

D O I：

10.1117/12.2267243

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Low-dimensional transit-time structures for terahertz generation and detection are discussed. The negative conductivity at terahertz frequencies is crucial for generation. It may arise in an array of silicon nanowires (1D), as well as in a thin silicon layer (2D) in "silicon-on-insulator" wafer. Ballistic regime, scattering regime and alternating barrier injection regime (BARITT) are simulated. The latter allows a negative conductivity even for rather strong scattering.

引用

页数：9

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