HTS dc SQUID based rf amplifier: development concept

被引：2
|
作者：
Prokopenko, GV
Shitov, SV
Borisenko, IV
Mygind, J
机构：
[1] Russian Acad Sci, Inst Radio Engn & Elect, Moscow 103907, Russia
[2] Tech Univ Denmark, Dept Phys, DK-2800 Lyngby, Denmark
来源：
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2002年 / 368卷 / 1-4期
关键词：
HTS Josephson junction; dc SQUID; rf amplifier;
D O I：
10.1016/S0921-4534(01)01157-1
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present a concept of a rf amplifier based on a directly coupled dc SQUID with bicrystal junctions, which have high saturation power and can be used with SIS mixers or possibly for satellite and cellular phone communications. A novel input resonant circuit is proposed using single layer of HTS. Estimated parameters are (per stage): central frequency 11 GHz, bandwidth approximate to 400 MHz, noise temperature approximate to 10 K, gain approximate to 10 dB and input saturation approximate to 1000 K GHz. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：153 / 156
页数：4
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