Computational chemistry study of hydrogen bonding using silicon instead of nitrogen, oxygen and fluorine

被引:0
|
作者
Cochran, Kathryn Lee [1 ]
Todebush, Patricia Metthe [1 ]
机构
[1] Clarion Univ Pennsylvania, Dept Nat Sci, Morrow, GA 30260 USA
关键词
D O I
暂无
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
1053-CHED
引用
收藏
页数:2
相关论文
共 50 条
  • [1] Hydrogen/nitrogen/oxygen defect complexes in silicon from computational searches
    Morris, Andrew J.
    Pickard, Chris J.
    Needs, R. J.
    PHYSICAL REVIEW B, 2009, 80 (14)
  • [2] HYDROGEN AND OXYGEN BONDING ON SILICON SURFACES
    WAGNER, H
    IBACH, H
    FESTKORPERPROBLEME-ADVANCES IN SOLID STATE PHYICS, 1983, 23 : 165 - 177
  • [3] Investigating Hydrogen Bonding in Phenol Using Infrared Spectroscopy and Computational Chemistry
    Fedor, Anna M.
    Toda, Megan J.
    JOURNAL OF CHEMICAL EDUCATION, 2014, 91 (12) : 2191 - 2194
  • [4] Orientation-dependent etching of silicon by fluorine molecules: A quantum chemistry computational study
    Dwivedi, Omesh Dhar
    Barsukov, Yuri
    Jubin, Sierra
    Vella, Joseph R.
    Kaganovich, Igor
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2023, 41 (05):
  • [5] AMORPHOUS SILICON-HYDROGEN-FLUORINE-OXYGEN ALLOYS
    FELDMAN, BJ
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 309 - 312
  • [6] Teaching bonding in organometallic chemistry using computational chemistry
    van Haaren, RJ
    Reek, JNH
    Oevering, H
    Coussens, BB
    van Strijdonck, GPF
    Kamer, PCJ
    van Leeuwen, PWNM
    JOURNAL OF CHEMICAL EDUCATION, 2002, 79 (05) : 588 - 591
  • [7] Study of hydrogen bonding in dihydroxyacetone and glyceraldehyde using computational methods
    Jahli, S.
    Aghdastinat, H.
    JOURNAL OF MOLECULAR STRUCTURE-THEOCHEM, 2008, 857 (1-3): : 7 - 12
  • [8] Chemistry and bonding of nitrogen in silicon oxynitride and silicon nitride films.
    Eng, J
    Opila, R
    Chabal, Y
    Queeney, K
    Chang, J
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2000, 219 : U515 - U515
  • [9] Hydrogen bonding in diamond: A computational study
    Ofer, O.
    Adler, Joan
    Hoffman, A.
    INTERNATIONAL JOURNAL OF MODERN PHYSICS C, 2006, 17 (07): : 959 - 966
  • [10] A Comparative Study: Void Formation in Silicon Wafer Direct Bonding by Oxygen Plasma Activation with and without Fluorine
    Wang, Chenxi
    Liu, Yannan
    Suga, Tadatomo
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2017, 6 (01) : P7 - P13