Study on ionization damage of silicon-germanium heterojunction bipolar transistors at various dose rates

被引：2
|
作者：
Sun Ya-Bin [1 ,2 ]
Fu Jun [1 ,2 ]
Xu Jun [1 ,2 ]
Wang Yu-Dong [1 ,2 ]
Zhou Wei [1 ]
Zhang Wei [1 ]
Cui Jie [1 ]
Li Gao-Qing [1 ]
Liu Zhi-Hong [1 ,2 ]
机构：
[1] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China
[2] Tsinghua Natl Lab Informat Sci & Technol, Beijing 100084, Peoples R China
来源：
ACTA PHYSICA SINICA | 2013年 / 62卷 / 19期
基金：
中国国家自然科学基金;
关键词：
silicon-germanium heterojunction bipolar transistor; enhanced low dose rate sensitivity; irradiation effect; PROTON RADIATION; X-RAY; IRRADIATION; PERFORMANCE; TOLERANCE; HBTS; BIAS;
D O I：
10.7498/aps.62.196104
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Ionizing radiation effects in silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) at different dose rates were investigated. Experimental results show that the base current increases with increasing accumulated dose for the high and low dose rates of irradiation, causing a significant drop in current gain. Besides, the lower the dose rate, the higher the radiation damage, which demonstrates a significantly enhanced low-date-rate sensitivity (ELDRS) effect in the SiGe HBTs. The different degradation behaviors for high and low dose rates of irradiation are compared with each other and discussed; furthermore, the underlying physical mechanisms are analyzed and investigated in detail.
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页数：7
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