Surface Recombination Noise in InAs/GaSb Superlattice Photodiodes

被引：5

作者：

Tansel, Tunay ^{[1
]}

Kutluer, Kutlu ^{[1
]}

Muti, Abdullah ^{[2
]}

Salihoglu, Omer ^{[2
]}

Aydinli, Atila ^{[2
]}

Turan, Rasit ^{[1
]}

机构：

[1] Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey

[2] Bilkent Univ, Dept Phys, Adv Res Labs, TR-06800 Ankara, Turkey

来源：

APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 03期

关键词：

PASSIVATION; DEVICES;

D O I：

10.7567/APEX.6.032202

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The standard Schottky noise approach alone is not sufficient to describe the noise mechanism in an InAs/GaSb superlattice photodetector at reverse negative bias. The additional noise identified appears at surface activation energies below 60 meV and is inversely proportional to the reverse bias. In order to satisfactorily explain the experimental data, we hereby propose the existence of a surface recombination noise that is a function of both the frequency and bias. The calculated noise characteristics indeed show good agreement with the experimental data. (C) 2013 The Japan Society of Applied Physics

引用

页数：4

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