LER improvement for sub-32nm pitch self-aligned quadruple patterning (SAQP) at back end of line (BEOL)

Critical back end of line (BEOL) trench (M-x) patterning at 7 nm technology node and beyond requires sub-36 nm pitch line/space pattern in order to meet the scaling requirements. This small pitch can be achieved by either extreme ultraviolet (EUV) lithography or 193 nm-immersion-lithography based self-aligned quadruple patterning (SAQP). With enormous challenges being faced in production readiness of EUV lithography, SAQP is expected to be the primary approach for M-x grid patterning. In contrast to the front end of line (FEOL) fin patterning, which has successfully deployed a SAQP approach since the 10 nm node technology, BEOL M-x presents a new challenge owing to the usage of significantly lower temperature budgets for film stack deposition. These temperature budgets have an adverse impact on the film material properties leading to emergence of several challenges for etch including selectivity, uniformity and roughness. In this presentation we will highlight those unique etch challenges associated with our BEOL M-x SAQP patterning strategy and summarize our efforts in optimizing the patterning stack, etch chemistries & process steps for meeting the 7 nm technology node targets. We will present comparison data on both organic and in-organic mandrel stacks with respect to LER/LWR & CDU. With LER being one of the most critical targets for 7 nm BEOL M-x, we will outline our actions for optimization of our stack including resist material, mandrel material, spacer material and others. Finally, we would like to update our progress on achieving the target LER of 1.5 nm for 32 nm pitch BEOL SAQP pattern.