The damage investigations of 4H-SiC after P-ion irradiation

In this work, a single crystal of 4H-SiC was subjected to phosphorus irradiation at 100 keV with four different fluences at room temperature (RT) and post-irradiation annealing treatments at temperature range from 200 to 600 degrees C. The measured effective refractive index reflected that the disorder increased with the increasing fluences and partially recovered after our annealing treatments. Rutherford backscattering /channeling (RBS/C) experiments displayed that above the fluence of 5.0 x 10(14)ions/cm(2), severe damage caused in the surface of 4H-SiC crystal. The amorphous layer about 136 nm induced when the fluence is up to 1.0 x 10(15)ions/cm(2)according to the transmission electron microscopy (TEM) results. The amorphous phenomenon was explained by lattice swelling. We obtained the damage threshold value for the formation of amorphous in 4H-SiC crystal is about 0.3 dpa. Phosphor is one of the important semiconductor dopant elements. This work provides reference data on selective doping of SiC-based electronic devices.