Wet-chemical conditioning of H-terminated silicon solar cell substrates Investigated by surface photovoltage measurements

被引：3

作者：

Angermann, H. ^{[1
]}

Stuerzebecher, U. ^{[2
]}

Kegel, J. ^{[1
,3
]}

Gottschalk, C. ^{[4
]}

Wolke, K. ^{[5
]}

Laades, A. ^{[2
]}

Conrad, E. ^{[1
]}

Klimm, C. ^{[1
]}

Stegemann, B. ^{[3
]}

机构：

[1] Helmholtz Zentrum, Inst Silizium Photovolta, Kekulestr 5, D-12489 Berlin, Germany

[2] CiS Inst Mikrosensorik & Photovoltaik, D-99099 Erfurt, Germany

[3] HTW Berlin Univ Appl Sci, D-12459 Berlin, Germany

[4] Subsidiary MKS Instruments, ASTeX GmbH, D-13355 Berlin, Germany

[5] Technol Consulting Wolke, D-75382 Althengstett, Germany

来源：

ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES XI | 2013年 / 195卷

关键词：

Si solar cell substrates; saw damage; texturization; wet-chemical treatment; interface passivation; SPV; QSSPC; MORPHOLOGY;

D O I：

10.4028/www.scientific.net/SSP.195.301

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：301 / +

页数：2

共 15 条

[1] Wet-chemical preparation of textured silicon solar cell substrates: Surface conditioning and electronic interface properties
Angermann, H.
Laades, A.
Stuerzebecher, U.
Conrad, E.
Klimm, C.
Schulze, T. F.
Jacob, K.
Lawerenz, A.
Korte, L.
ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES X, 2012, 187 : 349 - +
[2] Wet-chemical treatment and electronic interface properties of silicon solar cell substrates
Angermann, Heike
Rappich, Joerg
Klimm, Carola
CENTRAL EUROPEAN JOURNAL OF PHYSICS, 2009, 7 (02): : 363 - 370
[3] Conditioning of Si-interfaces by wet-chemical oxidation: Electronic interface properties study by surface photovoltage measurements
Angermann, Heike
APPLIED SURFACE SCIENCE, 2014, 312 : 3 - 16
[4] Wet-chemical passivation of atomically flat and structured silicon substrates for solar cell application
Angermann, H.
Rappich, J.
Korte, L.
Sieber, I.
Conrad, E.
Schmidt, M.
Huebener, K.
Polte, J.
Hauschild, J.
APPLIED SURFACE SCIENCE, 2008, 254 (12) : 3615 - 3625
[5] H-terminated silicon: spectroscopic ellipsometry measurements correlated to the surface electronic properties
Angermann, H
Henrion, W
Rebien, M
Fischer, D
Zettler, JT
Roseler, A
THIN SOLID FILMS, 1998, 313 : 552 - 556
[6] Wet-chemical passivation and characterization of silicon interfaces for solar cell applications
Angermann, H
Henrion, W
Rebien, M
Röseler, A
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2004, 83 (04) : 331 - 346
[7] Wet-chemical treatment for improved surface passivation of textured silicon heterojunction solar cells
Deligiannis, Dimitrios
Alivizatos, Spyridon
Ingenito, Andrea
Zhang, Dong
van Sebille, Martijn
van Swaaij, Rene A. C. M. M.
Zeman, Miro
PROCEEDINGS OF THE 4TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2014), 2014, 55 : 197 - 202
[8] Simple wet-chemical cleanings for high-efficiency silicon solar cell applications
Breitenstein, Lena
Sevenig, Florian
Pysch, Damian
Gottschalk, Christiane
Hermle, Martin
Warta, Wilhelm
ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES X, 2012, 187 : 325 - +
[9] Reduction of the Interface Defect Density on Crystalline Silicon Solar Cell Substrates by Wet-chemical Preparation of Ultrathin SiOx Passivation Layers
Balamou, Patrice
Angermann, Heike
Stegemann, Bert
2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2015,
[10] Electronic interface properties of silicon substrates after ozone based wet-chemical oxidation studied by SPV measurements
Angermann, Heike
Wolke, Klaus
Gottschalk, Christiane
Moldovan, Ana
Roczen, Maurizio
Fittkau, Jens
Zimmer, Martin
Rentsch, Jochen
APPLIED SURFACE SCIENCE, 2012, 258 (21) : 8387 - 8396

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