VCASDFAS Controlled Orientation and Improved Photovoltaic Characteristics of Cu(In,Ga)Se2 Solar Cells via Using In2Se3 Seeding Layers

In2Se3 films were utilized as seeding layers in the synthesis of Cu(In,Ga)Se-2 films via the spin-coating route. Selenizing the indium-containing precursors at 400 degrees C resulted in the formation of the hexagonal gamma-In2Se3 with the preferred (006) orientation. Increasing the selenization temperature to 500 degrees C yielded the (300)-oriented gamma-In2Se3. Using the preferred (006)-oriented In2Se3 as seeding layers produced the preferred (112)-oriented Cu(In,Ga)Se-2 film because of the crystalline symmetry. In contrast, the use of the (300)-oriented In2Se3 as seeding layers yielded the (220/204)-oriented Cu(In,Ga)Se-2 films. According to results obtained using SEM and the Hall effect, (112)-oriented Cu(In,Ga)Se-2 films had a denser morphology and more favorable electrical properties. Using the (112)-oriented Cu(In,Ga)Se-2 films as the absorber layer in the solar devices resulted in a significant increase in the conversion efficiency.