In spite of rapidly increasing demand and various applications of infrared (IR) detectors, their design process for the performance improvement has been mostly dependent on researchers' intuition and knowledge. We present two-dimensional unit structure design of the absorbing layer in IR detectors. A systematic approach is introduced to enhance the absorbing efficiency of incident beam in the near-infrared wavelength range. We derived a layered structure composed of a silicon nitride (Si3N4) layer and an amorphous silicon (a-Si) one in turn by the so called topology optimization in association with the time variant finite element analysis (FEA). It is confirmed that thickness at each layer is in associated with the IR wavelength so that detail dimensions of each layer are inferred. A prototype of the layered structure was fabricated and its performance has been verified through experimental measurement. (C) 2013 Optical Society of America
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Hanyang Univ, Dept Phys, Seoul 04763, South Korea
Hanyang Univ, Res Inst Nat Sci, Seoul 04763, South KoreaHanyang Univ, Dept Phys, Seoul 04763, South Korea
Pak, Sang Woo
Chu, Dongil
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Hanyang Univ, Dept Phys, Seoul 04763, South Korea
Hanyang Univ, Res Inst Nat Sci, Seoul 04763, South KoreaHanyang Univ, Dept Phys, Seoul 04763, South Korea
Chu, Dongil
Song, Da Ye
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Hanyang Univ, Dept Phys, Seoul 04763, South Korea
Hanyang Univ, Res Inst Nat Sci, Seoul 04763, South KoreaHanyang Univ, Dept Phys, Seoul 04763, South Korea
Song, Da Ye
Lee, Seung Kyo
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Hanyang Univ, Dept Phys, Seoul 04763, South Korea
Hanyang Univ, Res Inst Nat Sci, Seoul 04763, South KoreaHanyang Univ, Dept Phys, Seoul 04763, South Korea
Lee, Seung Kyo
Kim, Eun Kyu
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Hanyang Univ, Dept Phys, Seoul 04763, South Korea
Hanyang Univ, Res Inst Nat Sci, Seoul 04763, South KoreaHanyang Univ, Dept Phys, Seoul 04763, South Korea