Inverse design of the absorbing layer for detection enhancement in near-infrared range

被引:0
|
作者
Heo, Namjoon [1 ]
Lee, Jaeyeol [1 ]
Shin, Hyundo [1 ]
You, Jeonghoon [2 ]
Kim, Daekeun [3 ]
机构
[1] Yonsei Univ, Grad Sch Mech Engn, Seoul 120749, South Korea
[2] Yonsei Univ, Sch Mech Engn, Seoul 120749, South Korea
[3] Dankook Univ, Dept Mech Engn, Gyeonggi Do 448701, South Korea
来源
OPTICS EXPRESS | 2013年 / 21卷 / 20期
基金
新加坡国家研究基金会;
关键词
TOPOLOGY OPTIMIZATION; LIGHT; ABSORPTANCE; SYSTEM;
D O I
10.1364/OE.21.023220
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In spite of rapidly increasing demand and various applications of infrared (IR) detectors, their design process for the performance improvement has been mostly dependent on researchers' intuition and knowledge. We present two-dimensional unit structure design of the absorbing layer in IR detectors. A systematic approach is introduced to enhance the absorbing efficiency of incident beam in the near-infrared wavelength range. We derived a layered structure composed of a silicon nitride (Si3N4) layer and an amorphous silicon (a-Si) one in turn by the so called topology optimization in association with the time variant finite element analysis (FEA). It is confirmed that thickness at each layer is in associated with the IR wavelength so that detail dimensions of each layer are inferred. A prototype of the layered structure was fabricated and its performance has been verified through experimental measurement. (C) 2013 Optical Society of America
引用
收藏
页码:23220 / 23230
页数:11
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