Nb2O5 doping effect on electrical properties of ZnO-V2O5-Mn3O4 varistor ceramics

被引:22
|
作者
Nahm, Choon-W. [1 ]
机构
[1] Dong Eui Univ, Dept Elect Engn, Semicond Ceram Lab, Pusan 614714, South Korea
关键词
Grain boundaries; Electrical properties; ZnO; Varistors; ZINC-OXIDE VARISTORS; CURRENT-VOLTAGE CHARACTERISTICS; NONOHMIC PROPERTIES; MICROSTRUCTURE; SYSTEM;
D O I
10.1016/j.ceramint.2012.02.052
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The microstructure and electrical properties of ternary ZnO-V2O5-Mn3O4 varistor ceramics modified with Nb2O5 were systematically investigated for different amounts of Nb2O5. The average grain size for Nb2O5-doped ceramics was larger than Nb2O5-free ceramics and it was in the range of 6.64-7.27 mu m. The sintered density of pellets increased from 5.50 to 5.54 g/cm(3) as the Nb2O5 amount increased. The breakdown field increased from 947 to 4521 V/cm with an increase in the amount of Nb2O5, whereas a further addition caused it to decrease up to 4374 V/cm at 0.25 mol%. The varistor ceramics doped with 0.05 mol% Nb2O5 exhibited the best nonlinear properties, in which the nonlinear coefficient is 47 and the leakage current density is 0.14 mA/cm(2). (C) 2012 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
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页码:5281 / 5285
页数:5
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