A better hot-carrier-induced degradation monitor for several typical device parameters of pMOSFET's

被引：0

作者：

Zhang, JC ^{[1
]}

Hao, Y ^{[1
]}

Zhu, ZW ^{[1
]}

机构：

[1] Xidian Univ, Inst Microelect, Xian 710071, Peoples R China

来源：

SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS | 2001年

关键词：

pMOSFET's; hot-carrier-induced; degradation; degradation monitor;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

According to a lot of experimental studies, a better hot-carrier-induced degradation monitor of pMOSFET's is proposed in this paper. Utilizing the new degradation monitor, a new unified model for degradation simulation and lifetime prediction of pMOSFET's is built. Comparison between simulation and measured results shows the new degradation model has a higher accuracy and a wider application range.

引用

页码：1017 / 1020

页数：4

共 50 条

[1] Analysis of hot-carrier-induced degradation mode on pMOSFET's
Matsuoka, Fumitomo, 1600, (37):
[2] MODELING AND SIMULATION OF HOT-CARRIER-INDUCED DEVICE DEGRADATION IN MOS CIRCUITS
LEBLEBICI, Y
KANG, SM
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1993, 28 (05) : 585 - 595
[3] Hot-carrier-induced alterations of MOSFET capacitances: A quantitative monitor for electrical degradation
Esseni, D
Pieracci, A
Quadrelli, M
Ricco, B
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (11) : 2319 - 2328
[4] ANNEALING OF HOT-CARRIER-INDUCED MOSFET DEGRADATION
MAHNKOPF, R
PRZYREMBEL, G
WAGEMANN, HG
JOURNAL DE PHYSIQUE, 1988, 49 (C-4): : 771 - 774
[5] Hot-carrier-induced device degradation in Schottky barrier ambipolar polysilicon transistor
Kim, Dae Cheon
Kim, Dong Uk
Lee, Ah Reum
Cho, Man-Ho
Cho, Won-Ju
Park, Jong Tae
SOLID-STATE ELECTRONICS, 2021, 186
[6] MODELING OF NMOS TRANSISTORS FOR SIMULATION OF HOT-CARRIER-INDUCED DEVICE AND CIRCUIT DEGRADATION
LEBLEBICI, Y
KANG, SM
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1992, 11 (02) : 235 - 246
[7] A MOBILITY MODEL FOR SUBMICROMETER MOSFET SIMULATIONS INCLUDING HOT-CARRIER-INDUCED DEVICE DEGRADATION
HIROKI, A
ODANAKA, S
OHE, K
ESAKI, H
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (09) : 1487 - 1493
[8] ANALYSIS OF HOT-CARRIER-INDUCED DEGRADATION MODE ON PMOSFETS
MATSUOKA, F
IWAI, H
HAYASHIDA, H
HAMA, K
TOYOSHIMA, Y
MAEGUCHI, K
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (06) : 1487 - 1495
[9] HOT-CARRIER-INDUCED OFF-STATE CURRENT LEAKAGE IN SUBMICROMETER PMOSFET DEVICES
FANG, H
FANG, P
YUE, JT
IEEE ELECTRON DEVICE LETTERS, 1994, 15 (11) : 463 - 465
[10] Hot-carrier-induced degradation of LDD polysilicon TFTs
Valletta, A
Mariucci, L
Fortunato, G
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (01) : 43 - 50

← 1 2 3 4 5 →