Glucose sensing by an enzyme-modified ZnO-based FET

被引：13
|
作者：
Koike, Kazuto [1 ]
Mori, Yuina [1 ]
Sasa, Shigehiko [1 ]
Hirofuji, Yuichi [1 ]
Yano, Mitsuaki [1 ]
机构：
[1] Osaka Inst Technol, Nanomat Microdevices Res Ctr, Asahi Ku Ohmiya, Osaka 5358585, Japan
来源：
PROCEEDINGS OF THE 30TH ANNIVERSARY EUROSENSORS CONFERENCE - EUROSENSORS 2016 | 2016年 / 168卷
关键词：
enzyme-modified FET; ion-sensitive FET; ZnO-based FET; glucose sinsing; FIELD-EFFECT TRANSISTORS; BIOSENSORS;
D O I：
10.1016/j.proeng.2016.11.153
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Characteristics of an enzyme-modified field-effect transistor (EnFET) made of a ZnO-based ion-sensitive FET with immobilized glucose oxidase on the gate surface are studied for the application to healthcare chips. The EnFET was found to be able to detect reversibly and repeatedly the beta-D glucose in solution in the range of 0.2-40 mmol/L with an apparent Michaelis constant of 3.3 mmol/L, indicating the suitability for diabetic plasma glucose sensors. (C) 2016 The Authors. Published by Elsevier Ltd.
引用
收藏
页码：84 / 88
页数：5
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