Reduction of contact resistance by selective contact doping in fullerene n-channel organic field-effect transistors

被引：49
|
作者：
Singh, Sanjeev [1 ,2 ]
Mohapatra, Swagat K. [1 ,3 ]
Sharma, Asha [1 ,2 ]
Fuentes-Hernandez, Canek [1 ,2 ]
Barlow, Stephen [1 ,3 ]
Marder, Seth R. [1 ,3 ]
Kippelen, Bernard [1 ,2 ]
机构：
[1] Georgia Inst Technol, Ctr Organ Photon & Elect, Atlanta, GA 30332 USA
[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
[3] Georgia Inst Technol, Sch Chem & Biochem, Atlanta, GA 30332 USA
来源：
APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 15期
基金：
美国国家科学基金会;
关键词：
THIN-FILM TRANSISTORS; AIR-STABLE ORGANOMETALLICS;
D O I：
10.1063/1.4802237
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated the contact-doping effect on high performance n-channel C-60 organic field-effect transistors (OFETs) using the air-stable rhodocene dimer as an n-type dopant. The average charge mobility improved from a value of 0.48 cm(2)/(Vs) in a reference device to 1.65 cm(2)/(Vs) for contact-doped devices with a channel length of 25 mu m. The operational stability of contact-doped OFETs under continuous stress bias was found similar to the reference devices. (C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4802237]
引用
收藏
页数：4
相关论文
共 50 条
  • [1] Reduced contact resistance in top-contact organic field-effect transistors by interface contact doping
    Hou, Ji-Ling
    Kasemann, Daniel
    Widmer, Johannes
    Guenther, Alrun A.
    Luessem, Bjoern
    Leo, Karl
    APPLIED PHYSICS LETTERS, 2016, 108 (10)
  • [2] Contact Doping for Vertical Organic Field-Effect Transistors
    Guenther, Alrun A.
    Sawatzki, Michael
    Formanek, Petr
    Kasemann, Daniel
    Leo, Karl
    ADVANCED FUNCTIONAL MATERIALS, 2016, 26 (05) : 768 - 775
  • [3] Effect of contact resistance in organic field-effect transistors
    Shi, Yanjun
    Liu, Jie
    Hu, Yuanyuan
    Hu, Wenping
    Jiang, Lang
    NANO SELECT, 2021, 2 (09): : 1661 - 1681
  • [4] Organic field-effect transistors with reduced contact resistance
    Maeda, Takahiko
    Kato, Hisato
    Kawakami, Haruo
    APPLIED PHYSICS LETTERS, 2006, 89 (12)
  • [5] Nickel-aluminum alloy silicides with high aluminum content for contact resistance reduction and integration in n-channel field-effect transistors
    Koh, Alvin Tian-Yi
    Lee, Rinus Tek-Po
    Lim, Andy Eu-Jin
    Lai, Doreen Mei-Ying
    Chi, Dong-Zhi
    Hoe, Keat-Mun
    Balasubramanian, N.
    Samudra, Ganesh S.
    Yeo, Yee-Chia
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (03) : H151 - H155
  • [6] Organic n-channel materials for field-effect transistors.
    Laquindanum, JG
    Katz, HE
    Dodabalapur, A
    Lovinger, AJ
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1997, 213 : 368 - POLY
  • [7] Contact resistance and electrode material dependence of air-stable n-channel organic field-effect transistors using dimethyldicyanoquinonediimine (DMDCNQI)
    Wada, Hiroshi
    Shibata, Koji
    Bando, Yoshimasa
    Mori, Takehiko
    JOURNAL OF MATERIALS CHEMISTRY, 2008, 18 (35) : 4165 - 4171
  • [8] Nanoscale n-channel and ambipolar organic field-effect transistors
    Jung, TH
    Yoo, B
    Wang, L
    Dodabalapur, A
    Jones, BA
    Facchetti, A
    Wasielewski, MR
    Marks, TJ
    APPLIED PHYSICS LETTERS, 2006, 88 (18)
  • [9] Origin of Large Contact Resistance in Organic Field-Effect Transistors
    Minari, Takeo
    Liu, Chuan
    PROCEEDINGS OF THE 2013 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE (IITC), 2013,
  • [10] Contact Resistance in Organic Field-Effect Transistors: Conquering the Barrier
    Waldrip, Matthew
    Jurchescu, Oana D.
    Gundlach, David J.
    Bittle, Emily G.
    ADVANCED FUNCTIONAL MATERIALS, 2020, 30 (20)
12345