Non-Conventional Characterization of Electrically Active Dopant Profiles in Al-Implanted Ge by Depth-Resolved Micro-Raman Spectroscopy

被引:5
|
作者
Sanson, Andrea [1 ]
Napolitani, Enrico [2 ]
Giarola, Marco [3 ]
Impellizzeri, Giuliana [4 ]
Privitera, Vittorio [4 ]
Mariotto, Gino [3 ]
Carnera, Alberto [1 ]
机构
[1] Univ Padua, Dipartimento Fis & Astron, I-35131 Padua, Italy
[2] Univ Padua, CNR IMM MATIS, Dipartimento Fis & Astron, I-35131 Padua, Italy
[3] Univ Verona, Dipartimento Informat, I-37134 Verona, Italy
[4] Univ Catania, CNR IMM MATIS, Dipartimento Fis & Astron, I-95123 Catania, Italy
关键词
P-TYPE SI; GERMANIUM; SILICON; STRESS;
D O I
10.7567/APEX.6.042404
中图分类号
O59 [应用物理学];
学科分类号
摘要
Al-implanted Ge samples were investigated by micro-Raman spectroscopy combined with a small angle beveling technique. By means of a reverse Monte Carlo procedure, the concentration profiles of the electrically active dopant ions were determined from the Raman peak observed at similar to 370 cm(-1) related to substitutional Al atoms. Furthermore, a clear relationship between the Ge-Ge Raman peak at similar to 300 cm(-1) and the active dopant concentration was also observed. This work shows that micro-Raman spectroscopy could be adopted for quantitative characterizations of the carrier concentration profiles in extrinsic semiconductors. (C) 2013 The Japan Society of Applied Physics
引用
收藏
页数:4
相关论文
共 6 条
  • [1] Study of carrier concentration profiles in Al-implanted Ge by micro-Raman spectroscopy under different excitation wavelengths
    Sanson, A.
    Giarola, M.
    Napolitani, E.
    Impellizzeri, G.
    Privitera, V.
    Carnera, A.
    Mariotto, G.
    JOURNAL OF RAMAN SPECTROSCOPY, 2013, 44 (05) : 665 - 669
  • [2] A non-destructive approach for doping profiles characterization by micro-Raman spectroscopy: the case of B-implanted Ge
    Sanson, A.
    Napolitani, E.
    Carnera, A.
    Impellizzeri, G.
    Giarola, M.
    Mariotto, G.
    JOURNAL OF RAMAN SPECTROSCOPY, 2014, 45 (02) : 197 - 201
  • [3] Depth analysis of a compression layer in chemically strengthened glass using depth-resolved micro-Raman spectroscopy
    Terakado, Nobuaki
    Uchida, Shohei
    Takahashi, Yoshihiro
    Fujiwara, Takumi
    Arakawa, Mototaka
    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 2016, 124 (10) : 1164 - 1166
  • [4] Depth-resolved confocal micro-Raman spectroscopy for characterizing GaN-based light emitting diode structures
    Chen, Wei-Liang
    Lee, Yu-Yang
    Chang, Chiao-Yun
    Huang, Huei-Min
    Lu, Tien-Chang
    Chang, Yu-Ming
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2013, 84 (11):
  • [5] Depth-resolved in vivo micro-Raman spectroscopy of a murine skin tumor model reveals cancer-specific spectral biomarkers
    Wang, Hequn
    Huang, Naiyan
    Zhao, Jianhua
    Lui, Harvey
    Korbelik, Mladen
    Zeng, Haishan
    JOURNAL OF RAMAN SPECTROSCOPY, 2011, 42 (02) : 160 - 166
  • [6] Depth-resolved micro-Raman spectroscopy of tri-layer PFSA membrane for PEM fuel cells: how to obtain reliable inner water contents
    Peng, Z.
    Huguet, P.
    Deabate, S.
    Morin, A.
    Sutor, A. K.
    JOURNAL OF RAMAN SPECTROSCOPY, 2013, 44 (02) : 321 - 328