Enhanced Terahertz Pulses Emission From InAs Surface By Femtosecond Laser Pulses With Tilted Intensity Front

被引:0
|
作者
Avetisyan, Yu. [1 ]
Khachatryan, K. [1 ]
Beigang, R.
机构
[1] Yerevan State Univ, Dept Microwave Engn, 1 Alex Manoogian, Yerevan 375025, Armenia
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
It is shown that using femtosecond laser pulses with tilted intensity front allows controlling the direction of terahertz emission from InAs surface and by that way achieving significant increase in the generated power. (C) 2008 Optical Society of America
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页码:276 / +
页数:2
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