Electroresistance and current-induced metastable states in the thin film of half-doped manganite Pr0.5Sr0.5MnO3

被引：5
|
作者：
Wang, J. F. [1 ]
Chen, L. P. [2 ]
Jiang, Y. C. [1 ]
Gao, J. [1 ]
机构：
[1] Suzhou Univ Sci & Technol, Sch Math & Phys, Ctr Solid State Phys & Mat, Suzhou 215011, Jiangsu, Peoples R China
[2] Zhejiang Normal Univ, Dept Phys, Jinhua 321004, Zhejiang, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 17期
关键词：
RESISTIVITY; TRANSITION;
D O I：
10.1063/1.4800841
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electroresistance (ER) effects and current-induced metastable states in the thin film of Pr0.5Sr0.5MnO3 were investigated. The initial state was insensitive to weak currents and susceptible to high-density currents. As the current density reached a certain value, metastable states, which were very sensitive to weak currents at low temperatures, were excited. It was found that as the excited current increased, the induced metastable state showed a larger electroresistance in a wider temperature range. Interfacial effects related to electrodes could be ruled out. The observed effects might be related to the coexistence and instability of the multiphases in manganites. (C) 2013 AIP Publishing LLC
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页数：3
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