Fabrication and characterization of single junction GaAs solar cell epitaxially grown on Si substrate

被引：9

作者：

Kim, SangHyeon ^{[1
]}

Park, Min-Su ^{[1
]}

Geum, Dae-Myeong ^{[1
]}

Kim, Hosung ^{[1
]}

Ryu, GuenHwan ^{[1
]}

Yang, Hyun-Duk ^{[1
]}

Song, Jin Dong ^{[1
]}

Kim, Chang Zoo ^{[2
]}

Choi, Won Jun ^{[1
]}

机构：

[1] Korea Inst Sci & Technol, Seoul 136791, South Korea

[2] Korea Adv Nanofab Ctr, Suwon 443270, Gyeonggi Do, South Korea

来源：

CURRENT APPLIED PHYSICS | 2015年 / 15卷

关键词：

Compound solar cell; III-V on Si; Device characterization; EFFICIENCY; CONVERSION;

D O I：

10.1016/j.cap.2015.04.022

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we present GaAs solar cells on Si substrate by direct epitaxial growth of III-V layers on Si substrate. Fabricated solar cells have shown relatively high energy conversion efficiency of 11.17% without anti reflection coating. By analyzing external quantum efficiency, dark I-V characteristics, and photo luminescence spectra, we have found that possible defect state near the band edge strongly impact on the performance of GaAs solar cell on Si and termination of these defects will further improve the performance of GaAs solar cell directly grown on Si substrates. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：S40 / S43

页数：4

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