The band shifts in MoS2(0001) and WSe2(0001) induced by palladium adsorption

被引：4
|
作者：
Evans, Prescott E. [1 ]
Komesu, Takashi [1 ]
Schwier, Eike F. [2 ]
Kumar, Shiv [2 ]
Shimada, Kenya [2 ]
Dowben, Peter A. [1 ]
机构：
[1] Univ Nebraska, Nebraska Ctr Mat & Nanosci, Dept Phys & Astron, Theodore Jorgensen Hall,855 N 16th,POB 880299, Lincoln, NE 68588 USA
[2] Hiroshima Univ, Hiroshima Synchrotron Radiat Ctr HiSOR, Higashihiroshima 7390046, Japan
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 2020年 / 32卷 / 46期
基金：
美国国家科学基金会;
关键词：
efficient hole injection; transition metal dichalcogenide; semiconductor contacts; band alignment; TRANSITION-METAL DICHALCOGENIDES; FIELD-EFFECT TRANSISTORS; SINGLE-LAYER MOS2; ELECTRONIC-STRUCTURE; PHOTOELECTRON-SPECTROSCOPY; ELECTRICAL-PROPERTIES; MOLYBDENUM-DISULFIDE; XENON ADSORPTION; PERFORMANCE; CONTACT;
D O I：
10.1088/1361-648X/abadde
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The band structures of the transition metal dichalcogenides (TMD's) 2H-MoS2(0001) and 2H-WSe2(0001), before and after palladium adsorption, were investigated through angle-resolved photoemission. Palladium adsorption on 2H-MoS2(0001) is seen to result in very different band shifts than seen for palladium on 2H-WSe2(0001). The angle resolved photoemission results of palladium adsorbed on WSe2(0001) indicate that palladium accepts electron density from substrate. The resulting band shift will lead to a decrease in the barriers to the hole injection. The opposite band shifts occur upon palladium adsorption between 2H-MoS2(0001). The overall trend is consistent with the deposition of other metals deposited on TMD's, except that for palladium adsorption on MoS2(0001), there is an increase in the MoS2(0001) substrate band gap with palladium adsorption, as is evident from the combination of photoemission and inverse photoemission.
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页数：7
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