Determination of Aluminium Mole Fraction in AlGaN Layers of GaN-Capped AlGaN/GaN Heteroepitaxial Wafers by Ultraviolet Reflection

被引：3
|
作者：
Yanase, Yoshihata [1 ]
Shirai, Hiroshi [1 ]
Komiyama, Jun [1 ]
机构：
[1] Covalent Mat Corp, Hadano, Kanagawa 2578566, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 04期
关键词：
D O I：
10.7567/JJAP.52.048003
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ultraviolet reflection spectroscopy is applicable to the determination of the aluminium mole fraction of GaN-capped AlGaN/GaN heteroepitaxial wafers on silicon, while conventional photoluminescence is inapplicable. AlGaN peaks in the ultraviolet reflection spectra are clearly observed regardless of the cap, but the AlGaN photoluminescence peaks of the samples with a 2-nm-thick cap are difficult to observe clearly. For some capped samples, the quantum-well emission due to the cap is observed near the AlGaN peak. (C) 2013 The Japan Society of Applied Physics
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