Optimization of InSb Infrared Focal Plane Arrays

被引：0
|
作者：
Guo, Nan [1 ]
Hu, Wei-Da [1 ]
Chen, Xiao-Shuang [1 ]
Lv, Yan-Qiu [2 ]
Zhang, Xiao-Lei [2 ]
Si, Jun-Jie [2 ]
Lu, Wei [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, 500 Yu Tian Rd, Shanghai, Peoples R China
[2] Luoyang Optoelectron Inst, Luoyang 471009, Herts, Peoples R China
来源：
2012 12TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES (NUSOD) | 2012年
关键词：
PHOTODETECTORS; PHOTORESPONSE; PHOTODIODES; GAAS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The quantum efficiency (QE) for mid-wavelength InSb infrared focal plane arrays has been numerically studied. Effects of the absorption length and thickness of p-region on device QE have been investigated. Our work shows that the optimum thickness of p-region is largely dependent on the absorption characteristics of the InSb.
引用
收藏
页码：45 / +
页数：2
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