Specular and non-specular x-ray scattering study of SiO2/Si structures

被引:8
|
作者
Ulyanenkov, A
Omote, K
Matsuo, R
Harada, J
Matsuno, SY
机构
[1] Rigaku Corp, Xray Res Lab, Akishima, Tokyo 1968666, Japan
[2] Asahi Chem Ind Co Ltd, Analyt & Computat Sci Labs, Shizuoka 4168501, Japan
关键词
D O I
10.1088/0022-3727/32/12/306
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this investigation we apply the x-ray reflectivity and diffuse scattering measurements to study the interface and surface morphology and bulk properties of SiO2 amorphous films grown on Si substrates. Three samples with different interface and surface roughnesses are analysed. Simultaneous fitting of both specular reflectivity and diffuse scattering curves allows the determination of precise values of surface and interface roughness, film thickness and bulk density of silicon dioxide films. The distorted-wave Born approximation is used for quantitative characterization of diffuse scattering from the samples. The structural parameters obtained by the x-ray method agree with atomic force microscopy results.
引用
收藏
页码:1313 / 1318
页数:6
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