Ligand Orientation-Induced Lattice Robustness for Highly Efficient and Stable Tin-Based Perovskite Solar Cells

被引:111
|
作者
Li, Peizhou [1 ,2 ]
Dong, Hua [1 ,2 ,3 ]
Xu, Jie [1 ,2 ]
Chen, Jinbo [1 ,2 ]
Jiao, Bo [1 ,2 ]
Hou, Xun [1 ,2 ]
Li, Jingrui [4 ,5 ]
Wu, Zhaoxin [1 ,2 ,3 ]
机构
[1] Xi An Jiao Tong Univ, Sch Elect Sci & Engn, Key Lab Phys Elect & Devices, Minist Educ, Xian 710049, Peoples R China
[2] Xi An Jiao Tong Univ, Shaanxi Key Lab Informat Photon Tech, Sch Elect Sci & Engn, Xian 710049, Peoples R China
[3] Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Peoples R China
[4] Xi An Jiao Tong Univ, Elect Mat Res Lab, Key Lab, Minist Educ,Fac Elect & Informat Engn, Xian 710049, Peoples R China
[5] Xi An Jiao Tong Univ, Int Ctr Dielect Res, Fac Elect & Informat Engn, Xian 710049, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
HALIDE PEROVSKITES; FABRICATION;
D O I
10.1021/acsenergylett.0c00960
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Low-toxicity tin-based perovskites have exhibited huge potential for photovoltaics applications. However, the facile oxidation of Sn2+ to Sn4+ induces ubiquitous Sn vacancies and p-type doping in perovskite films. In addition, the fast crystallization easily leads to poor film morphology and high defect concentration. In this work, we developed a film-formation strategy via the fluoro-aniline isomers medium and achieved the simultaneous restriction of Sn2+ oxidation and regulation of crystallization. The ortho-fluorine ligand, which exhibits unidirectional and bent geometry at the surface, could contribute to the lattice robustness with better restriction of Sn vacancy formation, compared with the bidirectional and vertical ligands. The resulting perovskite solar cell (PSC) device modified by 2-F-PEA shows a considerable PCE of 10.17% (certified 8.58%), with an efficiency attenuation of less than 15% under 1600 h of light aging testing. Our findings could provide a new avenue for the enhancement of both efficiency and stability of tin-based PSCs.
引用
收藏
页码:2327 / 2334
页数:8
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