Wideband SiGe BiCMOS transimpedance amplifier for 20 Gb/s optical links

被引：3
|
作者：
Song, Qiwei [1 ]
Mao, Luhong [1 ]
Xie, Sheng [1 ]
机构：
[1] Tianjin Univ, Sch Elect Informat Engn, Tianjin 300072, Peoples R China
来源：
IEICE ELECTRONICS EXPRESS | 2015年 / 12卷 / 13期
基金：
中国国家自然科学基金;
关键词：
SiGe BiCMOS; wideband amplifier; modified RGC; capacitive degeneration; pi-type peaking network; SILICON AVALANCHE PHOTODETECTOR; BANDWIDTH ENHANCEMENT; TECHNOLOGY; RECEIVER; CMOS; ETHERNET;
D O I：
10.1587/elex.12.20150419
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel bandwidth enhancement technique based on a modified regulated cascode (RGC) transimpedance amplifier (TIA) is proposed and realized. The post stage of the TIA adopts capacitive degeneration and pi-type peaking network, maintaining the wideband and low group delay characteristics without increasing power dissipation. The TIA is implemented in a 0.18 mu m SiGe BiCMOS technology and tested with an on-chip 300 fF capacitor to emulate a photodiode. The measured transimpedance gain is 61 dB Omega with a -3 dB bandwidth of 15 GHz. The chip consumes 32 mW power from a single 3.3 V supply and occupies the area of only 0.3 mm(2).
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页数：8
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