Cu2ZnSn(S,Se)4 Thin Film Prepared from a Single-step Electrodeposited Cu-Zn-Sn-Se Precursor

被引：0

作者：

Septina, Wilman ^{[1
]}

Ikeda, Shigeru ^{[1
]}

Kyoraiseki, Akio ^{[1
]}

Harada, Takashi ^{[1
]}

Matsumura, Michio ^{[1
]}

机构：

[1] Osaka Univ, Res Ctr Solar Energy Chem, Osaka 5608531, Japan

来源：

2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2012年

关键词：

annealing; copper; electrochemical processes; photonic band gap; photovoltaic cells; tin; zinc; SOLAR-CELL; GROWTH;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Cu2ZnSn(S,Se)(4) thin film has been fabricated by sulfurization of a novel single-step electrodeposited Cu-Zn-Sn-Se precursor. Based on EDX analysis of the precursor film, the atomic percentages of Cu, Zn, Sn and Se measured to be 38.48%, 11.53%, 13.62% and 36.37%, respectively. The A1 Raman mode of Cu2ZnSnSe4 was detected from the film which suggests the formation of the quaternary compound during the deposition. Annealing of the precursor film at 550 degrees C under H2S-gas flow resulted in the formation of crystalline Cu2ZnSn(S,Se)(4) compound. Photoelectrochemical measurement of the film revealed that the Cu2ZnSn(S,Se)(4) thus-obtained had a p-type semiconductor photoresponse with the band gap energy of 1.48 eV.

引用

页码：2702 / 2706

页数：5

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