3D Monte Carlo Simulation of Tri-Gate MOSFETs Using Tetrahedral Finite Elements

被引：2

作者：

Aldegunde, Manuel ^{[1
]}

Garcia-Loureiro, Antonio J. ^{[1
]}

Martinez, Antonio ^{[2
]}

Kalna, Karol ^{[2
]}

机构：

[1] Univ Santiago de Compostela, Dept Elect & Computac, Santiago De Compostela 15782, Spain

[2] Univ Glasgow, Dept Elect & Elect Engn, Device Modelling Grp, Glasgow G12 8LT, Lanark, Scotland

来源：

SISPAD: 2008 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 2008年

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1109/SISPAD.2008.4648260

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A parallel 3D Monte Carlo (MC) simulator designed to work on unstructured tetrahedral elements has been developed for the simulations of nano-MOSFETs. The 3D MC code is tested by the simulating a 10 run gate length double gate (DG) MOSFET with a body thickness of 6.1 nm. We investigate in this device architecture the magnitude of the self-force arising because of the use of tetrahedral elements for the device mesh. Finally, the quantum corrections using density gradient approach are described and applied to a simulation of a 40 nm gate length TriGate MOSFET with a HfO2 gate stack.

引用

页码：153 / +

页数：2

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