Asymmetrical giant magneto-impedance (AGMI) in Co-based amorphous wires with a circumferential anisotropy, which utilises a high frequency axial bias field is proved to be very sensitive to the frequency of excitation and the dc current applied to the wire. The AGMI effect is studied in terms of the surface impedance tensor, demonstrating that the extent of asymmetry is determined by the ratio of the diagonal sigma (zz) and off-diagonal sigma (z phi) components of this tensor.
机构:
Department of Physics, Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, East China Normal UniversityDepartment of Physics, Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, East China Normal University
D.L.Chen
X.Li
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Department of Physics, Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, East China Normal UniversityDepartment of Physics, Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, East China Normal University
X.Li
H.L.Pan
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Department of Physics, Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, East China Normal UniversityDepartment of Physics, Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, East China Normal University
H.L.Pan
H.Y.Luan
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Department of Physics, Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, East China Normal UniversityDepartment of Physics, Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, East China Normal University
H.Y.Luan
Z.J.Zhao
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Department of Physics, Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, East China Normal UniversityDepartment of Physics, Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, East China Normal University
机构:
E China Normal Univ, Dept Phys, Engn Res Ctr Nanophoton & Adv Instrument, Shanghai 200062, Peoples R ChinaE China Normal Univ, Dept Phys, Engn Res Ctr Nanophoton & Adv Instrument, Shanghai 200062, Peoples R China
Chen, D. L.
Li, X.
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E China Normal Univ, Dept Phys, Engn Res Ctr Nanophoton & Adv Instrument, Shanghai 200062, Peoples R ChinaE China Normal Univ, Dept Phys, Engn Res Ctr Nanophoton & Adv Instrument, Shanghai 200062, Peoples R China
Li, X.
Pan, H. L.
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E China Normal Univ, Dept Phys, Engn Res Ctr Nanophoton & Adv Instrument, Shanghai 200062, Peoples R ChinaE China Normal Univ, Dept Phys, Engn Res Ctr Nanophoton & Adv Instrument, Shanghai 200062, Peoples R China
Pan, H. L.
Luan, H. Y.
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E China Normal Univ, Dept Phys, Engn Res Ctr Nanophoton & Adv Instrument, Shanghai 200062, Peoples R ChinaE China Normal Univ, Dept Phys, Engn Res Ctr Nanophoton & Adv Instrument, Shanghai 200062, Peoples R China
Luan, H. Y.
Zhao, Z. J.
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E China Normal Univ, Dept Phys, Engn Res Ctr Nanophoton & Adv Instrument, Shanghai 200062, Peoples R ChinaE China Normal Univ, Dept Phys, Engn Res Ctr Nanophoton & Adv Instrument, Shanghai 200062, Peoples R China