Femtosecond nanostructuring of silicon surfaces

被引：19
|
作者：
Zabotnov, SV
Golovan', LA
Ostapenko, IA
Ryabchikov, YV
Chervyakov, AV
Timoshenko, VY
Kashkarov, PK
Yakovlev, VV
机构：
[1] Moscow MV Lomonosov State Univ, Fac Phys, Moscow 119992, Russia
[2] Univ Wisconsin, Dept Phys, Milwaukee, WI 53211 USA
来源：
JETP LETTERS | 2006年 / 83卷 / 02期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/S0021364006020056
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Nanostructures were formed upon the irradiation of single-crystal silicon surfaces with femtosecond laser pulses. These nanostructures were detected using scanning electron microscopy, Raman spectroscopy, and a photoluminescence technique.
引用
收藏
页码：69 / 71
页数：3
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