Pentacene thin film transistor using organic material as a gate insulator

被引:0
|
作者
Kim, OB
Kim, YM
Kim, YK
Kim, JS
机构
[1] Hongik Univ, Dept Control & Elect Engn, Mapo Ku, Seoul, South Korea
[2] Hongik Univ, Dept Chem Engn, Mapo Ku, Seoul, South Korea
来源
关键词
organic thin film transistor; pentacene; transfer characteristic; output characteristics; organic gate insulator;
D O I
10.1080/10587250108030116
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Organic thin film transistors were fabricated using pentacene and organic gate insulator on the glass substrates. Polyimide and photo-acryl were used as a gate insulator respectively. We investigated transfer and output characteristics of the thin film transistors(TFT's) having active layer of pentacene. We calculated field effect mobility and on/off ratio from transfer characteristics of pentacene TFT's, and measured IR absorption spectrum of polyimide used as gate insulator.
引用
收藏
页码:403 / 406
页数:4
相关论文
共 50 条
  • [1] Fabrication and characterization of a pentacene thin film transistor with a polymer insulator as a gate dielectric
    Lee, Chulwoo
    Ko, Jungmin
    Lee, Junyoung
    Chung, Ilsub
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2008, 26 (04): : 710 - 715
  • [2] Characteristics of pentacene organic thin film transistors with gate insulator processed by organic molecules
    Song, CK
    Koo, BW
    Lee, SB
    Kim, DH
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (4B): : 2730 - 2734
  • [3] Characteristics of pentacene organic thin film transistor with top gate and bottom contact
    袁广才
    徐征
    赵谡玲
    张福俊
    姜薇薇
    宋丹丹
    朱海娜
    李少彦
    黄金英
    黄豪
    徐叙瑢
    Chinese Physics B, 2008, 17 (05) : 1887 - 1892
  • [4] Characteristics of pentacene organic thin film transistor with top gate and bottom contact
    Yuan Guang-Cai
    Xu Zheng
    Zhao Su-Ling
    Zhang Fu-Jun
    Jiang Wei-Wei
    Song Dan-Dan
    Zhu Hai-Na
    Li Shao-Yan
    Huang Jin-Ying
    Huang Hao
    Xu Xu-Rong
    CHINESE PHYSICS B, 2008, 17 (05) : 1887 - 1892
  • [5] Characteristics of pentacene organic thin film transistor with top gate and bottom contact
    Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
    不详
    Chin. Phys., 2008, 5 (1887-1892):
  • [6] Preparation of Pentacene Thin Film Deposited Using Organic Material Auto-Feeding System for the Fabrication of Organic Thin Film Transistor
    Kim, Young Baek
    Choi, Bum Ho
    Lim, Yong Hwan
    Yoo, Ha Na
    Lee, Jong Ho
    Kim, Jin Hyeok
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2011, 11 (02) : 1464 - 1467
  • [7] Device characteristics of pentacene dual-gate organic thin-film transistor
    Koo, Jae Bon
    Suh, Kyung Soo
    You, In Kyu
    Kim, Seong Hyun
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (8A): : 5062 - 5066
  • [8] Novel organic inverters with dual-gate pentacene thin-film transistor
    Koo, Jae Bon
    Ku, Chan Hoe
    Lim, Jung Wook
    Kim, Seong Hyun
    ORGANIC ELECTRONICS, 2007, 8 (05) : 552 - 558
  • [9] Electrical characteristics of pentacene organic thin film transistors with silicon dioxide gate insulator
    Choi, JS
    Kim, DY
    Lee, JH
    Kang, DY
    Kim, YK
    Shin, DM
    MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 2000, 349 : 339 - 342
  • [10] Fabrication and characterization of the pentacene thin film transistor with a Gd2O3 gate insulator
    Kang, SJ
    Chung, KB
    Park, DS
    Kim, HJ
    Choi, Y
    Jang, MH
    Noh, M
    Whang, CN
    SYNTHETIC METALS, 2004, 146 (03) : 351 - 354