The influence of the doping level on the optical properties of porous silicon

被引：17

作者：

Hilbrich, S ^{[1
]}

Theiss, W ^{[1
]}

ArensFischer, R ^{[1
]}

Gluck, O ^{[1
]}

Berger, MG ^{[1
]}

机构：

[1] FORSCHUNGSZENTRUM JULICH, FORSCHUNGSZENTRUM, INST SCHICHT & IONENTECH, D-52425 JULICH, GERMANY

来源：

THIN SOLID FILMS | 1996年 / 276卷 / 1-2期

关键词：

optical properties; silicon; luminescence; raman scattering;

D O I：

10.1016/0040-6090(95)08060-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The dependence of the optical properties of p-doped porous silicon layers on the doping level of the substrate is studied systematically. Reflectivity measurements from the far infrared to the ultraviolet as well as Raman and photoluminescence experiments have been used as analytical tools. A clear correlation of the photoluminescence intensity and the strength of the Si-H stretching modes which monitors the surface-to-volume ratio in freshly prepared samples is shown.

引用

页码：231 / 234

页数：4

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